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Experimental reliability studies and SPICE simulation for EEPROM at temperatures up to 450°C

: Kelberer, Andreas; Dreiner, Stefan; Grella, Katharina; Dittrich, Dirk; Kappert, Holger; Vogt, Holger; Paschen, Uwe


Journal of microelectronics and electronic packaging 13 (2016), Nr.1, S.33-37
ISSN: 1551-4897
Bundesministerium für Bildung und Forschung BMBF
03IO0804/01SF0804; PICF
Programme Inter-Carnot-Fraunhofer
Fraunhofer IMS ()
EEPROM; high temperature; reliability; SPICE simulation; retention; endurance; oxide charge; silicon-on-insulator

The paper presents reliability studies of single polysilicon EEPROM cells at temperatures from 50 °C to 450 °C. The technically challenging measurements at elevated temperatures above 250 °C have been carried out for accelerated reliability studies. Furthermore, a SPICE macro model has been extended to the wide temperature range to describe the retention and endurance performance of the memory cell and to enable a better insight into the physics involved.