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High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies

: Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-:
10th European Microwave Integrated Circuits Conference, EuMIC 2015. Proceedings : EuMW 2015, European Microwave Week, 7-8 September 2015, Paris, France
Piscataway, NJ: IEEE, 2015
ISBN: 978-2-87487-040-8
ISBN: 978-2-87487-038-5
European Microwave Integrated Circuits Conference (EuMIC) <10, 2015, Paris>
European Microwave Week (EuMW) <18, 2015, Paris>
Fraunhofer IAF ()
gallium nitride; MMIC; power amplifiers; high efficiency; millimeter wave

Two high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC technology at Ka-band frequencies are reported in this paper. They have also been designed in order to ensure high output power and high gain. In continuous-wave (CW) operation, the first three stage power amplifier provides 4.5 W of output power and 33% of power-added-efficiency (PAE) at 30 GHz. The first power amplifier has been mirrored and combined in order to reach higher output power levels. This second MMIC power amplifier provides 8.1 W of output power and 30% of PAE at 30 GHz.