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A 200 GHz driver amplifier in metamorphic HEMT technology

: Amado-Rey, A.B.; Campos-Roca, Y.; Maroldt, S.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-:
Asia-Pacific Microwave Conference, APMC 2015 : 6-9 December, 2015; Jinling Hotel, Nanjing, China
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8766-5
ISBN: 978-1-4799-8765-8
3 S. (Vol.2)
Asia-Pacific Microwave Conference (APMC) <2015, Nanjing>
Fraunhofer IAF ()

A driver amplifier operating at 200 GHz has been design and manufactured with compact size, high gain, broadband performance and high power added efficiency (PAE). This monolithic microwave integrated circuit (MMIC) is realized in grounded coplanar waveguides (GCPW) technology in conjunction with a 35 nm gate length metamorphic high electron mobility transistor technology (mHEMT). The four-stage driver amplifier provides more than 20 dB linear gain between 180 GHz and 270 GHz (40 % bandwidth) and PAE higher than 3.3% with more than 7.4 dBm saturated output power at 200 GHz.