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A low-noise saturation-stacked bandgap reference for image sensor applications

: Subbiah, Iyappan; Süss, Andreas; Kravchenko, Andrey; Hosticka, Bedrich J.; Krautschneider, Wolfgang H.


Institute of Electrical and Electronics Engineers -IEEE-; National Institute for Research and Development in Microtechnologies, Bucharest:
International Semiconductor Conference, CAS 2014. Proceedings : 13-15 October 2014, Sinaia, Romania
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3916-9 (Print)
International Semiconductor Conference (CAS) <2014, Sinaia>
Fraunhofer IMS ()
saturation-stacked; low-noise; image sensors

A novel architecture for a bandgap voltage reference is presented in this paper. The voltage reference, designed for image sensor applications, is primarily targeted for a low-noise operation along with other practical constraints such as high power supply rejection, temperature immunity and short start-up time. The analysis and operation of the circuit is discussed and the trade-offs involved in the implementation aspects are examined. The measurement results of the fabricated circuit in a 0.35-µm CMOS process show a noise voltage level of 450 nV/sqrt(Hz) at 10 Hz, a temperature coefficient of 14 ppm/K and a PSRR of 52 dB.