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A 200 GHz medium power amplifier MMIC in cascode metamorphic HEMT technology

: Campos-Roca, Y.; Tessmann, A.; Amado-Rey, A.B.; Wagner, S.; Massler, H.; Hurm, V.; Leuther, A.


IEEE microwave and wireless components letters 24 (2014), Nr.11, S.787-789
ISSN: 1051-8207
ISSN: 1531-1309
Fraunhofer IAF ()
cascode HEMT; G-Band; grounded coplanar waveguide (GCPW); metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); power amplifier (PA)

A 200 GHz power amplifier is presented. The millimeter-wave monolithic integrated circuit (MMIC) has been realized in a 35 nm InAlAs/InGaAs cascode metamorphic high electron mobility transistor (MHEMT) process in grounded coplanar waveguide technology (GCPW). The amplifier demonstrates an output power of 14 mW with 11.4 dB compressed power gain at 200 GHz. This represents an increase in output power in comparison to previous reported MHEMT-based MMIC amplifiers. The small-signal gain demonstrates a peak value of 20 dB and is above 15.9 dB from 185 to 215 GHz.