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Submicron-AlGaN/GaN MMICs for space applications

: Quay, R.; Waltereit, P.; Kühn, J.; Brueckner, P.; Heijningen, M. van; Jukkala, P.; Hirche, K.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2013 : 2-7 June 2013, Seattle
New York, NY: IEEE, 2013
ISBN: 978-1-4673-6174-3 (USB)
ISBN: 978-1-4673-2141-9 (online)
ISBN: 978-1-4673-6177-4 (Print)
ISBN: 978-1-4673-6175-0 (print)
4 S.
International Microwave Symposium (IMS) <2013, Seattle/Wash.>
Fraunhofer IAF ()
MMIC; HPA; x-Band; reliability; space technology; W-band; mm-wave

This paper reports on two AlGaN/GaN MMIC technologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency. Dual-stage 8 W output power MMICs for telemetry applications in space have a PAE of more than 50% at 8.5 GHz with a lifetime of 106 h at a channel temperature of 200°C. Space evaluation tests indicate a stability of this technology suitable for space. For scientific missions a high-gain high power amplifier MMIC and module have been developed for 90 GHz operation with up to 16 dB of linear gain and 400 mW of output power.