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Design, fabrication, and preliminary test results of a new InGaAsP/InP high-Q ring resonator for gyro applications

: Dell'Olio, F.; Ciminelli, C.; Armenise, M.N.; Soares, F.M.; Rehbein, W.


Institute of Electrical and Electronics Engineers -IEEE-:
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012 : Compound Semiconductor Week, 27. Aug. - 30. Aug. 2012, Santa Barbara, CA, USA
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-1724-5 (online)
ISBN: 978-1-4673-1725-2 (print)
International Conference on Indium Phosphide and Related Materials (IPRM) <24, 2012, Santa Barbara/Calif.>
Compound Semiconductor Week (CSW) <2012, Santa Barbara/Calif.>
Fraunhofer HHI ()

Design, fabrication and initial characterization of large-size InGaAsP/InP ring resonators for gyro applications are reported in this paper. The devices configuration includes a ring with a radius of 13 mm and a straight bus waveguide with tapered ends. Four cavities with the same radius and different values of the bus/ring gap have been fabricated by metal-organic vapour-phase-epitaxy, standard photolithography and reactive ion etching. Characterization results show that the resonator with nominal gap = 1.444 m has a quality factor exceeding 7×105 and resonance depth close to 10 dB.