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Flip-chip compatible electroabsorption modulator for up to 40 Gb/s, integrated With 1.55 micrometer DFB laser and spot-size expander

: Kreissl, J.; Bornholdt, C.; Gärtner, T.; Mörl, L.; Przyrembel, G.; Rehbein, W.


IEEE Journal of Quantum Electronics 47 (2011), Nr.7, S.1036-1042
ISSN: 0018-9197
Fraunhofer HHI ()

An electroabsorption modulator (EAM) was integrated with a distributed feedback laser and a spot-size expander forming an electro-modulated laser (EML) device. The EMLs are based on the conventional InP/InGaAsP material system and are designed for flip-chip mounting. They rely on a buried heterostructure with Fe-doped blocking layers, and the EAM section is optically butt-joint-coupled. The performance of EMLs with two different EAM lengths is reported. 150 micrometer long EAM sections can be operated with an f3dB bandwidth of 25 GHz allowing an error-free large signal modulation at 25 Gb/s with a dynamic extinction ratio (ER) of 11 dB. With 100 micrometer long EAM sections, the f3dB bandwidth increases up to 33 GHz. Large signal modulation at 40 Gb/s is achieved with a dynamic ER of more than 8 dB. Transmission of 40 Gb/s over 2 km is demonstrated.