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Recent developments in InP-based optoelectronic devices

: Venghaus, H.; Bach, H.-G.; Bauer, S.; Beling, A.; Heidrich, H.; Hoffmann, D.; Hüttl, B.; Kaiser, R.; Kreissl, J.; Mekonnen, G.G.; Möhrle, M.; Rehbein, W.; Sartorius, B.; Velthaus, K.-O.


Pustelny, T.:
Integrated Optics: Theory and Applications : Wednesday 31 August 2005, Warsaw
Bellingham, WA: SPIE, 2005 (Proceedings of SPIE 5956)
ISBN: 0-8194-5963-1
Integrated Optics: Theory and Applications <2005, Warsaw>
Fraunhofer HHI ()

Recent development trends in InP-based optoelectronic devices are illustrated by means of selected examples. These include lasers for uncooled operation and direct modulation at 10 Gbit/s, complex-coupled lasers, which exhibit particularly low sensitivity to back reflections as well as monolithic mode-locked semiconductor lasers as ps-pulse sources for OTDM applications. Furthermore, a Mach-Zehnder interferometer modulator for high bit rate applications (40 Gbit/s and beyond) is described, and finally, photoreceivers and ultra high-speed waveguide-integrated photodiodes with > 100 GHz bandwidth are presented, which are key component for high bit rate systems, advanced modulation format transmission links, and for high speed measurement equipment as well.