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C-Axis oriented AlN films prepared on diamond film substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition

: Gong, H.; Jiang, X.


Journal of Crystal Growth 235 (2002), Nr.1-4, S.333-339
ISSN: 0022-0248
Fraunhofer IST ()
c-axis oriented pure AlN film; diamond film substrate; electron cyclotron resonance plasma; surface acoustic wave devices; reactant precursor; film morphology; film orientation; deposition rate; diamond crystal orientation; substrate temperature; microwave power; scanning electron microscopy; energy-dispersive x-ray analysis; X-ray diffraction

Plasma-enhanced chemical vapor deposition of aluminum nitride (AlN) films was performed on diamond film substrates using electron cyclotron resonance which have an attractive potential for application such as surface acoustic wave devices operating at high frequency. N(ind 2) and AlCl(ind 3) were used as reactant precursors. The dependences of the film morphology, film orientation, deposition rate on the diamond crystal orientation, substrate temperature and microwave power were investigated by scanning electron microscopy, energy dispersive X-ray analysis and X-ray diffraction. c-Axis oriented pure AlN films have been achieved.