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Subharmonically pumped 210 GHz I/Q mixers

: Lopez-Diaz, D.; Kallfass, I.; Tessmann, A.; Leuther, A.; Massler, H.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 : CSICS: Back in the Bay, Monterey, CA, 3-6 October 2010, Technical digest
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-7437-0
ISBN: 978-1-4244-7436-3
4 S.
Compound Semiconductor Integrated Circuit Symposium (CSICS) <32, 2010, Monterey/Calif.>
Fraunhofer IAF ()
I/Q mixer; MMIC; millimeter wave; subharmonic mixer; G-Band; frequency conversion

Two subharmonically pumped 210 GHz I/Q mixer MMICs have been successfully realized in a 100 nm gate length metamorphic high electron mobility transistor (mHEMT) technology. The mixers have been designed using a branchline and a Lange coupler to generate the 90° phase shift between the I and Q ports. A conversion gain of more than -19 dB has been achieved with both mixers. The measured LO to RF isolation of the second harmonic is better than 21 dB.