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MOMBE growth of high quality GaInAsP (lambda g=1.05 mu m) for waveguide applications


Journal of Crystal Growth 164 (1996), Nr.1-4, S.449-453
ISSN: 0022-0248
International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) <5, 1995, La Jolla/Calif.>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
chemical beam epitaxial growth; etching; gallium arsenide; iii-v semiconductors; indium compounds; infrared spectra; optical planar waveguides; photoluminescence; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; MOMBE growth; waveguide applications; band gap equivalent emission wavelength; growth temperature; temperature dependence; optical quality; lateral uniformity; x ray diffraction; linewidth; dry etching; optical propagation losses; 1.05 to 1.7 mum; 465 to 500 c; ga0.11in0.89as0.23p0.77

The MOMBE growth of Ga0.11In0.89As0.23P0.77 material with a band gap equivalent emission wavelength of 1.05 mu m carried out in the growth temperature range of 465-500 degrees C provided material of high structural and optical quality as well as high lateral uniformity and reproducibility of the alloy composition. The low-temperature photoluminescence linewidth below 5 meV and the X-ray diffraction linewidth approaching the theoretical limit have been obtained at the growth temperature of 465 degrees C. Rib waveguides fabricated by dry etching techniques on MOMBE GaInAsP layers grown at this temperature exhibit optical propagation losses down to 0.1 dB/cm at lambda =1.55 mu m.