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MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs


Journal of Crystal Growth 188 (1998), Nr.1-4, S.281-287
ISSN: 0022-0248
International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE) <6, 1997, Montreux>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()
chemical beam epitaxial growth; etching; gallium arsenide; iii-v semiconductors; indium compounds; integrated optics; iron; optical waveguides; photoluminescence; scanning electron microscopy; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor lasers; surface structure; x-ray diffraction; mombe; metal-organic molecular beam epitaxy; integrated photonic ic; waveguide layer structures; crystalline properties; optical properties; optical losses; dry etching; doping; selective area deposition; growth temperature; masked laser layer stack; sem; xrd; sims; 900 to 950 c; 485 c; 1.05 micron; 1.15 micron; GaInAsP:fe; inp

The fabrication of advanced undoped and semi-insulating optical waveguides to be implemented in integrated photonic ICs on InP is demonstrated on the basis of the metal organic molecular beam epitaxy growth technique. The optimised deposition of waveguide layer structures of high crystalline and optical quality resulted in optical losses as low as 0.7/0.9 dB/cm (TE/TM polarisation) at lambda =1.55 mu m. Implementation of a thin InP marker between the slab and the rib served to control rib formation during dry etching. Doping with iron using an elemental source was applied for semi-insulating behaviour of the waveguide devices. Selective area deposition of the waveguide layer structure at a growth temperature of 485 degrees C around a masked laser layer stack to enable laser/waveguide butt coupling has been developed to meet the requirements imposed by photonic ICs.