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Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP



IEEE Lasers and Electro-Optics Society:
LEOS '98, IEEE Lasers and Electro-Optics Society. Annual meeting. Conference proceedings. Vol.1 : 1 - 4 December 1998, the Walt Disney World, Swan Hotel, Orlando, Florida, 11th annual meeting
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-4947-4
ISBN: 0-7803-4948-2
ISBN: 0-7803-4949-0
IEEE Lasers and Electro-Optics Society (Annual Meeting) <11, 1998, Orlando/Fla.>
Fraunhofer HHI ()
gallium arsenide; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; microwave photonics; mmic; optical design techniques; optical fabrication; optical receivers; photodetectors; narrow band photoreceiver oeics; inp; optical design; GHz range; high-speed devices; top-illuminated InGaAs-InP metal-semiconductor-metal photodetector; high-electron-mobility- transistors; InGaAs-inalas-InP; HEMT; 1.55 mum; 0.2 mum; InGaAs-InP

We report on our recent results on the monolithic integration of InP-based narrow band photoreceiver OEICs for 1.55 mu m working in the 60 GHz range. These OEICs were achieved by successive improvement of the design and fabrication techniques used for OEICs working in the 38 GHz regime. The OEICs combine two types of high-speed devices, a top-illuminated InGaAs-InP metal-semiconductor-metal photodetector (MSM PD) with 0.2 mu m feature and 0.15 mu m high-electron-mobility-transistors (HEMT) based on InGaAs-InAlAs-InP.