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InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38/60 GHz narrowband photoreceivers

: Schlaak, W.; Engel, T.; Umbach, A.; Passenberg, W.; Steingrüber, R.; Seeger, A.; Schramm, C.; Mekonnen, G.G.; Unterborsch, G.; Bach, H.-G.; Bimberg, D.

Ploog, K.H.; Tränkle, G.; Weimann, G.:
Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors : Berlin, Germany, 22 - 26 August 1999
Bristol: IOP Publishing, 2000 (Institute of Physics - Conference Series 166)
ISBN: 0-7503-0704-8
International Symposium on Compound Semiconductors (ISCS) <26, 1999, Berlin>
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; integrated optoelectronics; mmic; optical receivers; ultrafast photoreceivers; optoelectronic microwave monolithic integrated circuits; oemmic; optimization; narrowband photoreceivers; broadband photoreceivers; oeic fabrication technology; 38 GHz; 60 GHz; 1.55 micron; 40 Gbit/s; 155 mbit/s; inp

Ultrafast 1.55 mu m photoreceivers are key elements for future long-haul communication systems operating at bitrates of 40 Gbit/s, as well as for mobile access systems using 38 GHz or 60 GHz carrier frequencies for data-rates of up to 155 Mbit/s. Therefore, a versatile integration concept for InP-based coplanar designed OEMMICs for the 1.55 mu m wavelength regime is demonstrated, which allows independent optimization of the constituting devices.