Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Preparation and characterization of thin cubic boron nitride films

: Bewilogua, K.; Schütze, A.; Walter, H.; Kouptsidis, S.

Abernathy, C.R.; Brown, W.D.; Buckley, D.N.; Dismukes, J.P.; Kamp, M.; Moustakas, T.D.; Pearton, S.J.; Ren, F. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division; Electrochemical Society -ECS-, Electronics Division; Electrochemical Society -ECS-, High Temperature Materials Division:
Second Symposium on III-V Nitride Materials and Processes 1997. Proceedings
Pennington/NJ: Electrochemical Society, 1998 (Electrochemical Society. Proceedings 97-34)
ISBN: 1-566-77187-0
Electrochemical Society (Meeting) <192, 1997, Paris>
Conference Paper
Fraunhofer IST ()
coating property; cubic boron nitride; ion assisted film deposition; negative electron affinity; process control; sputtering; target material; thin film

The goal of our work was to develop d.c. magnetron sputter process for the c-BN deposition. For the experiments especially boron carbide (B4C) were used. The process development was subdividet in different phases. As first a r.f. diode sputtering process was optimized for a h-BN target and transferred to a B4C target, followed by d.c. magnetron sputtering experiments with the B4C target. Essential process parameters for the c-BN deposition are the relative reactive gas flow, the ion energy and the ion current density at the substrate. The adhesion of c-BN is stongly limited by compressive stress.One way to reduce the stress might be that after the nucleation of the cubic phase the process parameters will be changed to more 'softer'conditions. We observed the nucleation of the cubic phase in situ by measuring the substrate currents. Several film properties like hardness, electrical conductivity or electron emission behaviour were investigated.