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GaAs/AlGaAs-Quantenfilm-Photodetektoren für Kameras im 8...12 Mikrometer Bereich

GaAs/AlGaAs quantumwell photodetectors for IR cameras in the 8...12 mu m range

Technisches Messen : TM 66 (1999), No.9, pp.344 ff
ISSN: 0340-837X
ISSN: 0178-2312
ISSN: 0171-8096
Journal Article
Fraunhofer IAF ()
infrared detector; IR-Detektor; Quantenfilm-Detektor; quantum well detector; QWIP; thermal imaging; Wärmebildtechnik

Intersubband transitions in GaAs/AlGaAs heterostructures are increasingly used in cameras for the thermal infrared regime. An excellent thermal resolution has been achieved in particular in the 8 ... 12 mu m spectral regime. We report on the basic physics of these quantum well infrared photodetectors (QWIPs) and on the properties of cameras based on these devices in comparison to other detector materials. Finally we address a few applications for which QWIPs are the material of choice.