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InP DHBT technology for 100 Gbit/s applications

InP-DHBT-Technologie für 100-Gbit/s-Anwendungen
: Driad, R.; Makon, R.E.; Benkhelifa, F.; Lösch, R.

International Conference on Compound Semiconductor Manufacturing Technology 2008. Digest of papers : April 14 - 17, 2008, Westin Chicago North Shore, Chicago, Illinois, U.S.A.
St. Louis: GaAS MANTECH, 2008
ISBN: 978-1-89358-011-4
International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) <23, 2008, Chicago, Ill.>
Conference Paper
Fraunhofer IAF ()
InP; InP-DHBT; 100 Gbit/s; VCO; demultiplexer; DEMUX

In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The MBE grown InP-based DHBTs with an emitter area of 1 × 4 µm2 exhibited peak cutoff frequencies (fT and fMAX) > 300 GHz, and a breakdown voltage (BVCEo) of ~ 5 V.
The potential of this technology has been first assessed by the realization of a voltage controlled oscillator (VCO), exhibiting a high output power and a large tuning range. Subsequently, a demultiplexer (DEMUX) suitable for 100 Gbit/s fibre optical links, has been successfully fabricated and operated up to 110 Gbit/s.