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Metamorphic MMICs for operation beyond 200 GHz

Metamorphe MMICs für den Einsatz im Frequenzbereich oberhalb von 200 GHz
: Tessmann, A.; Kallfass, I.; Leuther, A.; Massler, H.; Schlechtweg, M.; Ambacher, O.


Gallium Arsenide Application Symposium Association -GAAS-; Institute of Electrical and Electronics Engineers -IEEE-; European Microwave Association:
3rd European Microwave Integrated Circuits Conference 2008. Proceedings : Held in Amsterdam, from 27 to 31 October 2008 as part of European Microwave Week 2008, EuMW
New York, NY: IEEE, 2008
ISBN: 978-2-87487-007-1
European Microwave Integrated Circuits Conference (EuMIC) <3, 2008, Amsterdam>
European Microwave Week (EuMW) <11, 2008, Amsterdam>
Conference Paper
Fraunhofer IAF ()
MMIC; S-MMIC; G-Band; H-band; low-noise amplifier (LNA); rauscharmer Verstärker; MHEMT; mixer; Mischerschaltkreis; imaging; Bildgebungsverfahren

In this paper, we present the development of advanced millimetre-wave and submillimeter-wave monolithic integrated circuits for use in active and passive high-resolution imaging systems operating beyond 200 GHz. A 210 GHz subharmonically pumped dual-gate field-effect transistor (FET) mixer has been successfully realized using our 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Furthermore, a G-band low-noise amplifier MMIC demonstrating a linear gain of more than 16 dB between 180 and 220 GHz and a state-of-the-art noise figure of 4.8 dB was fabricated using a gate length of 50 nm. Finally, a submillimeter-wave monolithic integrated circuit (S-MMIC) could be realized based on an advanced 35 nm mHEMT technology, offering a small-signal gain of more than 15 dB between 270 and 310 GHz.