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Suppression of parasitic substrate modes in Flip-Chip packaged coplanar W-Band amplifier MMICs

Unterdrückung von parasitären Substratmoden in Flip-Chip aufgebauten, koplanaren W-Band-Verstärkerschaltungen
: Tessmann, A.; Haydl, W.H.; Kerssenbrock, T.V.; Heide, P.; Kudszus, S.

Sigmon, B. ; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium Digest 2001. Vol.1
Piscataway, NJ: IEEE, 2001
ISSN: 0149-645X
International Microwave Symposium (IMS) <2001, Phoenix/Ariz.>
Conference Paper
Fraunhofer IAF ()
surface wave; Oberflächenwelle; parallel-plate mode; Parallelplattenmode; flip-chip packaging; Flip-Chip-Montage; MMIC; coplanar waveguide; koplanarer Wellenleiter; W-Band; PHEMT; GaAs

In this work, we describe the impact of different mounting configurations for flip-chip assemblies of W-band millimeter-wave integrated circuits (MMICs). Coplanar 94 GHz amplifiers with high gain have been flip-chip mounted on both, semi-insulating (s. i.) GaAs and n-type doped silicon (n-Si) carriers. The influence of carrier thickness and conductivity on the isolation between the input and output port was investigated to minimize the power leakage into parasitic modes in the flip-chip substrate. The use of lossy n-Si substrates resulted in a significant reduction of feed back and crosstalk effects, and thus an unconditional stable operation of the flip-chip packaged W-band amplifier MMICs was achieved.