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50 nm MHEMT technology for G- and H-band MMICs

50nm MHEMT Technologie für G- und H-Band Millimeterwellen-Schaltungen
: Leuther, A.; Tessmann, A.; Dammann, M.; Schwörer, C.; Schlechtweg, M.; Mikulla, M.; Lösch, R.; Weimann, G.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 19th International Conference on Indium Phosphide and Related Materials, IPRM 2007 : 14-18 May 2007, Matsue, Japan
Piscataway, NJ: IEEE, 2007
ISBN: 1-4244-0874-1
International Conference on Indium Phosphide and Related Materials (IPRM) <19, 2007, Matsue>
Conference Paper
Fraunhofer IAF ()
metamorphic; metamorph; HEMT; H-band; MMIC

A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nm gate length MHEMT and includes a 50 µm substrate backside process with dry etched through-substrate vias. For the electron confinement an In(0.8)Ga(0.2)As/In(0.53)Ga(0.47)As composite channel was used. The devices are passivated with BCB and SiN to achieve a median time-to-failure of 2.7 x 10(6) h in air. Cut-off frequencies f(t) and f(max) of 375 GHz were extrapolated for a 2 x 15 µm gate width device. Low-noise amplifiers with more than 15 dB gain in the frequency range from 192 GHz to 235 GHz were realized.