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Solid source MBE growth on InP-based DHBTs for high-speed data communication

Feststoffquellen-MBE-Wachstum von InP-basierenden DHBT > für schnelle Datenkommunikationsanwendungen
: Aidam, R.; Lösch, R.; Driad, R.; Schneider, K.; Makon, R.E.


Yoshino, J.:
MBE-XIV, 14th International Conference on Molecular Beam Epitaxy 2006 : 3-8 September 2006, Waseda University, Tokyo, Japan
Amsterdam: Elsevier, 2007 (Journal of crystal growth 301/302.2007)
International Conference on Molecular Beam Epitaxy (MBE) <14, 2006, Tokyo>
Conference Paper, Journal Article
Fraunhofer IAF ()
InP; InP-DHBT; double heterojunction bipolar transistor; Doppel-Hetero-Bipolar-Transistor; MBE; molecular beam epitaxy; Molekularstrahlepitaxie

We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The technology is based on DHBTs with an InP emitter, a graded InGaAs:C base and a composite InGaAs/InGaAsP/InP collector, grown by solid source phosphorous MBE. High carbon doping levels in the base layer with excellent carrier mobility values allow the fabrication of devices with DC current gain about 90 and cut-off frequencies beyond f(ind t)=265 GHz. Using this technology, integrated circuits, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 and 80 Gbit/s have been successfully fabricated.