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How to achieve efficiencies exceeding 22% with multicrystalline n-type silicon solar cells

: Schindler, F.; Michl, B.; Krenckel, P.; Riepe, S.; Benick, J.; Müller, R.; Richter, A.; Glunz, S.W.; Schubert, M.C.

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Energy Procedia 124 (2017), pp.777-780
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <7, 2017, Freiburg>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; feedstock; Kristallisation und Wafering; Charakterisierung von Prozess- und Silicium-Materialien; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen

In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact. By applying a “high-performance” (HP) crystallization process with an adapted seed structure in order to obtain an optimized grain boundary area fraction, we reduce recombination losses in the HP mc-Si material to a minimum. We discuss the electrical properties of the optimized n-type HP mc-Si, which features very low material-related efficiency losses of approximately 0.5%abs and, thus, enables an efficiency potential of 22.6% with regard to a cell limit of 23.1% of the TOPCon cell concept adapted for multicrystalline silicon. Results at the device level reveal a record efficiency of 21.9%, which is the highest efficiency reported for a multicrystalline silicon solar cell. Finally, we discuss the deviations between the predicted efficiency potential and the solar cell results.