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Phasenbeziehungen und kinetische Modellierung von flüssigphasengesintertem SiC mit oxidischen und nitridischen Additiven

: Neher, Roland
: Michaelis, Alexander; Seifert, Hans Jürgen

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Dresden, 2014, XV, 161 pp.
Dresden, TU, Diss., 2014
URN: urn:nbn:de:bsz:14-qucosa-148121
Dissertation, Electronic Publication
Fraunhofer IKTS ()
SiC; Al2O3; AlN; Flüssigphasensintern; Phasenbildung; Kinetik; Randschicht; Dilatometrie

In the present dissertation the formation of microstructure, the kinetics of densification and the formation of surface layers developing during liquid phase sintering of silicon carbide are studied. The focus is on the additive systems Al2O3 plus Y2O3 and AlN plus Y2O3.
Phase and especially liquid phase formation in both of the systems SiC, Al2O3 , Y2O3 and AlN, Al2O3 , Y2O3 are investigated in detail examining 12 espectively 17 different compositions per system. Melting temperatures have been determined by TG/DTA, in both systems for the first time. Phase composition of samples was analysed by the combination of XRD, SEM and EDX. In the system SiC, Al2O3 , Y2O3 the formation of the phases expected from the quasibinary Al2O3 , Y2O3 could be observed thus silicon carbide has to be in equilibrium with the oxide additives. The low solubility of SiC in the oxide melt, which was suggested by Hoffmann and Nader, could be confirmed. In the system AlN, Al2O3 , Y2O3 the formation of phases as stated by Medraj was confirmed, except for the dimension of the stability region of the γ- spinel and YAG which is wider in the present work.
For the first time diffusion coefficients of the species Y3+ and Al3+ in the oxide melt formed by Al2O3 and Y2O3 at temperatures above 1825 ◦ C were determined. The values are in the order of 2 10−6 cm2 /s which results in a diffusion length of 14.1 μm for a diffusion time of one second. This allows the fast equilibration of Y and Al deficiencies.
Kinetics of densification was modeled by kinetic field, master curve and thermokinetic method, based on detailed experimental investigation of the shrinkage during liquid phase sintering of SiC. It could be proved that the first 30 − 40 % of densification are controlled by solid phase reactions which accelerate particle rearrangement without presence of a liquid phase. During the remaining 60 − 70 % of densification a liquid is present, resulting in the predominance of mechanisms of liquid phase sintering. The models deliver activation energies in the range from 608 KJ/mol to 1668 kJ/mol and allow, within the scope of validity of each method the prediction of densification during liquid phase sintering of silicon carbide.
When sintering silicon carbide with Al2O3 plus Y2O3 the formation of several surface layers, depending on atmosphere, maximum temperature, dwelling time and amount and composition of additives was observed. In nitrogen atmosphere with low partial pressures a surface layer consisting of AlN is forming whilst at high partial pressures SiAlON- polytypes occur. After sintering in Argon or Ar-CO- atmosphere three main types of surface layers are present. One consists of alumina, one contains only YAG and one shows highly porous, additive depleted regions. An explanation for the formation of the several surface layers could be given by the combination of the determined diffusion coefficients with the results achieved in the thermodynamics part.
The results achieved in this work can be a contribution to the knowledge based design of the production process of liquid phase sintering of silicon carbide.