Publica
Hier finden Sie wissenschaftliche Publikationen aus den FraunhoferInstituten. NBTI modeling in analog circuits and its application to longterm aging simulations
 Institute of Electrical and Electronics Engineers IEEE; IEEE Electron Devices Society; IEEE Reliability Society: IEEE International Integrated Reliability Workshop, IIRW 2014 : Final Report, 12  16 October 2014, South Lake Tahoe, California Piscataway, NJ: IEEE, 2014 ISBN: 9781479973088 ISBN: 9781479972869 ISBN: 9781479972753 ISBN: 9781479972746 pp.2934 
 International Integrated Reliability Workshop (IIRW) <2014, South Lake Tahoe/Calif.> 
 European Commission EC FP7ICT; 619234; MoRV Modelling Reliability under Variability 

 English 
 Conference Paper 
 Fraunhofer IIS, Institutsteil Entwurfsautomatisierung (EAS) () 
Abstract
We propose a circuitlevel modeling approach for the threshold voltage shift in PMOS devices due to the negativebias temperature instability (NBTI). The model is suitable forapplication in analog circuit design and reproduces the results of existing digitalstress NBTI models in the limit of twolevel stress signals. It accounts for recovery effects during intervals of low stress, and it predicts a stresspattern dependent saturation of the degradation at large operation times. Since the model can be solved numerically in an efficient way, we have direct access to the threshold voltage shift at arbitrary times, in particular to the exact solution at large operation times, without any approximation. We implement the model via the Cadence Spectre URI. Finally, we make use of the model to compare the aging properties of several analog stress patterns. We furthermorepresent the results of an analog circuitlevel NBTI simulation of a ring oscillator.