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Inline processes for the stabilization of p-type crystalline Si solar cells against potential-induced degradation

: Nagel, N.; Saint-Cast, P.; Glatthaar, M.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-3156368 (706 KByte PDF)
MD5 Fingerprint: 8824550ab2eda9d602e89f5c633c1112
Created on: 6.12.2014

Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; degradation; performance; reliability

In order to stabilize multicrystalline Si solar cells against potential-induced degradation of the shunting type (PID-s), an intermediate SiO2 layer was grown between the n+-diffused emitter and the PECVD SiN antireflection coating. Two inline processes were investigated and implemented in an industrial pro-cessing sequence: UV oxidation and thermal oxidation in a walking-string furnace. In both cases excellent PID-s resistivity was obtained as measured by a PID-s cell test before encapsulation. After encapsulation in standard glass / ethylene vinyl acetate / backsheet modules the UV oxidized cells exceed the requirements defined in the new edition of the IEC 62804 standard with respect to PID-s resistivity on module level. The thermally oxidized cells are even more stable. Additionally, before PID-s an increase of cell efficiency by 0.2% relative compared to cells without oxide was obtained for thermal SiO2 films.