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A D-band frequency doubler MMIC based on a 100-nm metamorphic HEMT technology

Ein D-Band Frequenzverdoppler-MMIC auf einer metamorphen HEMT Technologie mit 100nm Gatelänge
: Campos-Roca, Y.; Schwörer, C.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.


IEEE microwave and wireless components letters 15 (2005), No.7, pp.466-468
ISSN: 1051-8207
ISSN: 1531-1309
Journal Article
Fraunhofer IAF ()
coplanar waveguide; Koplanarleitung; CPW; frequency multiplier; Frequenzvervielfacher; metamorphic high electron mobility transistor; metamorpher Transistor mit hoher Elektronenbeweglichkeit; MHEMT; MMIC

A coplanar single-ended frequency doubler based on a 100 nm metamorphic HEMT technology is presented. For an input power of 4.8 dBm, this doubler demonstrates an output power between 2.6 and - 0.3 dBm over the bandwidth from 105 to 145 GHz, that is, a 3-dB bandwidth of 32% has been achieved. To the knowledge of the authors, this is the first reported multiplier based on MHEMT technology at D-band or higher frequencies.