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Variability-aware compact model strategy for 20-nm bulk MOSFETs

: Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen

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Japan Society of Applied Physics -JSAP-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014. Proceedings : Yokohama, Japan, 9 - 11 September 2014
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-5288-5
ISBN: 978-1-4799-5289-2
ISBN: 978-1-4799-5287-8
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <19, 2014, Yokohama>
European Commission EC
Conference Paper, Electronic Publication
Fraunhofer IISB ()
Fraunhofer EAS ()
compact model; MOSFET; variability

In this paper a variability-aware compact modeling strategy is presented for 20-nm bulk planar technology, taking into account the critical dimension long-range process variation and local statistical variability. Process and device simulations and statistical simulations for a wide range of combinations of L and W are carefully carried out using a design of experiments approach. The variability aware compact model strategy features a comprehensively extracted nominal model and two groups of selected parameters for extractions of the long-range process variation and statistical variability. The unified variability compact modeling method can provide a simulation frame for variability aware technology circuit co-optimization.