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Millimeter-wave circuits based on advanced metamorphic HEMT technology

Auf metamorpher HEMT Technologie basierende Millimeterwellenschaltungen
: Tessmann, A.; Leuther, A.; Schwörer, C.; Massler, H.; Reinert, W.; Walther, M.; Lösch, R.; Schlechtweg, M.


Thumm, M.:
Joint 29th International Conference on Infrared and Millimeter Waves (IRMMW 2004) and 12th International Conference on Terahertz Electronics (THz 2004)
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8490-3
International Conference on Infrared and Millimeter Waves (IRMMW) <29, 2004, Karlsruhe>
International Conference on Terahertz Electronics (THz) <12, 2004, Karlsruhe>
Conference Paper
Fraunhofer IAF ()
metamorphic; metamorph; HEMT; MMIC; coplanar waveguide; koplanare Wellenleiter; low noise; rauscharm; amplifier; Verstärker; G-Band

Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-off frequencies of f(ind t) = 293 GHz and f(ind max) = 337 GHz were achieved. The IC process features high yield on transistor and circuit levels. Single-stage low-noise amplifiers demonstrate a small signal gain of 12 dB and a noise figure of 2.2 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 19 dB at 200 GHz. These results are equivalent to those achieved using state-of-the-art InP-based HEMT technologies.