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A review of PECVD aluminum oxide for surface passivation

: Saint-Cast, P.; Hofmann, M.; Kühnhold, S.; Kania, D.; Weiss, L.; Heo, Y.-H.; Billot, E.; Olwal, P.; Trogus, D.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-2365750 (223 KByte PDF)
MD5 Fingerprint: f3a526a64d3cc30ec13cedff4b3c7189
Created on: 27.4.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

During the last few years aluminum oxide became an inescapable passivation layer in the Si photovoltaic field. The keys of its success are its excellent interface with the Si surface and its powerful field effect, which lead to best passivation quality ever reported on p-type silicon surfaces. Plasma-enhanced chemical vapor deposition (PECVD) allows the fabrication of high-quality aluminum oxide layers that can be used for the passivation of p-type silicon surfaces of a wide range of doping levels. In this paper, the properties of PECVD Al2O3 layers are reviewed, including the passivation of highly and lowly doped p-type surfaces and the suitability of these processes to industrial solar cell production.