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High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours

: Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J.

European Microwave Association:
7th European Microwave Integrated Circuits Conference, EuMIC 2012. Proceedings : 29-30 Oct 2012, Amsterdam, The Netherlands, European Microwave Week
Louvain-la-Neuve: European Microwave Assiciation, 2012
ISBN: 978-2-87487-028-6
European Microwave Integrated Circuits Conference (EuMIC) <7, 2012, Amsterdam>
European Microwave Week (EuMW) <15, 2012, Amsterdam>
Conference Paper
Fraunhofer IAF ()
AlGaN/GaN; HEMTs; MMIC; reliability; space

We report on technology, performance and reliability of state-of-the-art AlGaN/GaN MMICs for space applications. Our quarter-micron gate length HEMTs have breakdown voltages beyond 150 V and deliver 5 W/mm output power density at 30 V drain bias with 50% PAE at 10 GHz operating frequency. Packaged two-stage MMICs with 8 W output power for telemetry applications have a PAE above 40% with a lifetime above 105 h at a channel temperature of 200°C. Initial space evaluation tests indicate a suitable stability of our technology in space.