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Interface Characterization of Dry-Etched Emitters

: Clement, C.; Seiffe, J.; Hofmann, M.; Rentsch, J.; Preu, R.; Naumann, V.; Werner, M.

Fulltext urn:nbn:de:0011-n-2210734 (389 KByte PDF)
MD5 Fingerprint: 816f73b339b38625eb697e3bff55dc46
Created on: 7.12.2012

European Commission:
26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC. Proceedings : 5th to 9th September 2011 at the CCH - Congress Centre and International Fair Hamburg in Germany
München: WIP-Renewable Energies, 2011
ISBN: 3-936338-27-2
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <26, 2011, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Fraunhofer CSP ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

The electrical quality of a diffused phosphorous emitter can be significantly improved by etching back the defect-rich surface region (dead layer). This work focuses on the combination of a dry-etch process of the dead layer and a subsequent inline PECVD deposition of the anti-reflective coating (ARC). As we will show in the present work, the surface passivation of the ARC deposited on the plasma-etched surface is affected by a poor firing stability. At a critical temperature of about 800°C, the firing stability of the plasma-etched samples is no longer guaranteed. Therefore, the characteristics and the composition of the resulting Si/SiNx interface play a decisive role. To investigate the reason for the firing-instability of the dry-etched samples, the interface is analyzed by transmission electron microscopy (TEM) and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The etch-back emitters show a porous interface structure with a roughness of about 10 to 20 nm and strong blistering effects in the SiNx layer.