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Lateral charge carrier diffusion in InGaN quantum wells

: Danhof, J.; Solowan, H.-M.; Schwarz, U.T.; Kaneta, A.; Kawakami, Y.; Schiavon, D.; Meyer, T.; Peter, M.


Physica status solidi. B 249 (2012), No.3, pp.480-484
ISSN: 0031-8957
ISSN: 0370-1972
Journal Article
Fraunhofer IAF ()
InGaN quantum wells; lateral charge carrier diffusion; microphotoluminescence; time resolved photoluminescence

We investigated lateral charge carrier transport in indium gallium nitride InGaN/GaN multi-quantum wells for two different samples, one sample emitting green light at about 510 nm and the other emitting cyan light at about 470 nm. For the cyan light emitting sample we found a diffusion constant of 1.2 cm2/s and for the green light emitting sample 0.25 cm2/s. The large difference in diffusion constant is due to a higher point defect density in the green light emitting quantum wells (QWs) as high indium incorporation tends to reduce material quality.