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High-speed selector-driver using abrupt delta-doped InP/InGaAs/InP DHBTs

: Driad, R.; Makon, R.E.; Ritter, D.


IEEE Electron Device Letters 32 (2011), No.8, pp.1059-1061
ISSN: 0741-3106
ISSN: 0193-8576
Journal Article
Fraunhofer IAF ()
double heterojunction bipolar transistor (DHBT); InP; integrated circuit technology; pulse doping

This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n+-InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ensure very high current gains of »90, low saturation voltages of less than 1 V, and high cutoff frequencies of ~350 GHz. Using this technology, a compact high-speed high-voltage multiplexer-driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2 Vpp with a power consumption of 2W.