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Micro-electroluminescence of cyan InGaN-based multiple quantum well structures

: Meyer, T.; Peter, M.; Danhof, J.; Schwarz, U.T.; Hahn, B.


Physica status solidi. A 208 (2011), No.7, pp.1523-1525
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer IAF ()
electroluminescence; InGaN; microscopy; MOVPE; quantum well

Micro-electroluminescence measurements were performed on multiple quantum well samples grown on sapphire and GaN substrates with emission wavelength 495 nm. Meandering structures were found both in intensity and peak energy. Areas with higher emission intensity had lower energy, which is a hint for carrier redistribution within the quantum wells. A comparison between atomic force microscopy and photoluminescence microscopy revealed that V-shaped pits reside in regions with low intensity and are associated with higher emission energy. Small intensity and emission energy variations were also found in defect-free areas and are probably caused by indium content or quantum well thickness fluctuations leading to higher carrier density in regions with low potential energy.