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Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

Zuverlässigkeit und Degradationsmechanismen von AlGaAs/InGaAs und InAlAs/InGaAs HEMTs
: Dammann, M.; Leuther, A.; Benkhelifa, F.; Feltgen, T.; Jantz, W.


Physica status solidi. A 195 (2003), No.1, pp.81-86
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer IAF ()
reliability; Zuverlässigkeit; degradation mechanisms; Degradationsmechanismus; life time; Lebensdauer; InP-based HEMT; InP; HEMT; HEMTs auf InP Substrat; GaAS; Ohmsche Kontakt Degradation; ohmic contact degradation; activation energy; Aktivierungsenergie; biased accelerated life test

The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported. HEMTs with high In content in the active channel, alternatively fabricated an InP substrates and on GaAs substrates covered by a metamorphic buffer (MHEMT), are compared. Despite the high dislocation density in the buffer layer MHEMTs and InP based HEMTs exhibit comparable reliability. AlGaAs/GaAs HEMTs are more reliable than their InAlAs/InGaAs counterparts, especially when operated at high drain voltage. Failure mechanisms are thermally activated gate sinking, Ohmic contact degradation and hot electron induced degradation.