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From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices

: Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.

International Conference on Compound Semiconductor MANufacturing TECHnology, CS MANTECH 2011 : May 16th-19th, 2011, Palm Springs, California, USA
Madison, Wisconsin: Omnipress, 2011
3 pp.
International Conference on Compound Semiconductor MANufacturing TECHnology (CS MANTECH) <26, 2011, Palm Springs/Calif.>
Conference Paper
Fraunhofer IAF ()
GaN; AlGaN; HEMT; MMIC; reliability

We report on a reproducible 3'' GaN HEMT technology showing good device performance and reliability. AlGaN/GaN HEMT structures are grown on semi-insulating SiC substrates by MOCVD with sheet resistance uniformities better than 3%. Device fabrication is performed using standard processing techniques involving both e-beam and stepper lithography. The process technology exhibits an excellent uniformity across a single wafer and a high reproducibility between individual wafers of the same or a different batch. Good performance is shown at different examples, such as large power bars for 2 GHz frequency as well as MMICs running at 18 GHz. Reliability tests are performed at both radio frequency (RF) and direct current (DC) stress conditions and indicate promising device stability.