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High-efficiency c-Si solar cells passivated with ALD and PECVD aluminum oxide

: Saint-Cast, P.; Benick, J.; Kania, D.; Weiss, L.; Hofmann, M.; Rentsch, J.; Preu, R.; Glunz, S.W.


IEEE Electron Device Letters 31 (2010), No.7, pp.695-697
ISSN: 0741-3106
ISSN: 0193-8576
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

Ultrathin (7 nm) atomic layer deposited Al2O3 layers and high-deposition-rate plasma-enhanced chemical vapor deposited AlOx layers have been applied and characterized as rear-surface passivation for high-efficiency silicon solar cells. The excellent efficiency values (up to 21.3%-21.5%) demonstrate that both aluminum oxide deposition processes have a very high potential comparable to the reference cells with SiO2 passivation. The high voltages (similar to 680 mV), the excellent long-wavelength quantum efficiency, and the high short-circuit currents of these cells (similar to 40 mA/cm(2)) are a proof for the low rear-surface recombination velocity and excellent internal rear-surface reflection.