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Quaternary GaInAsN with high In content: Dependence of band gap energy on N content

Quaternäres GaInAsN mit hohem In-Gehalt: Abhängigkeit der Bandlückenenergie von N-Gehalt
: Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.


Applied Physics Letters 80 (2002), No.14, pp.2448-2450
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
GaInAsN; dilute Arsenide-Nitride; Arsenid-Nitrid; interaction parameter; Wechselwirkungsparameter; quantum-well; Quantentopf; strain; Verspannung; MBE

Quaternary pseudomorphically strained GaInAsN films and double-quantum wells were grown by plasma assisted molecular-beam epitaxy on an InP substrate. The In content ranged from 53% to 70% while the N content was varied between 0% and 2.4%. A reduction of compressive strain and a low-energy shift of photoluminescence (PL) peak position was observed with increasing N concentration, accompanied by a reduction in PL peak intensity and increase in linewidth. The net effect of N incorporation on the GaInAsN band gap energy was calculated from the measured PL peak energies. The thus obtained composition dependent GaInAsN band gab energy was fitted using the band anticrossing model, yielding values for the interaction parameter C(MN) for high In-containing GaInAsN being only slightly smaller than reported for low In-content GaInAsN on GaAs.