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Towards a-Si:H rear passivated industrial-type silicon solar cells

: Hofmann, M.; Saint-Cast, P.; Bareis, D.; Wagenmann, D.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-1433116 (146 KByte PDF)
MD5 Fingerprint: 8ec41c48f9fca30da35d0206bfb824ea
Created on: 31.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Amorphous hydrogenated silicon (a-Si:H) has already been shown to allow for excellent surface passivation of crystalline silicon surfaces. The implementation of this passivation layer system into an industrial LFC-PERC-type cell (applying screen-printed front contacts) was so far hindered by the limited thermal stability of the a-Si:H passivation quality. This paper shows that an excellent passivation is possible if plasma etching and a-Si:H deposition are performed after the screen-printing and firing of front contacts when a phosphorus emitter with sufficient phosphorus content is present during firing. This phosphorus-doped layer efficiently getters impurities. Effective surface recombination velocities far below 100 cm/s are demonstrated. Hence, the use of a-Si:H based rear passivation for industrial application seems possible.