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Advanced analytical model for the effective recombination velocity of locally contacted surfaces

: Saint-Cast, P.; Rüdiger, M.; Wolf, A.; Hofmann, M.; Rentsch, J.; Preu, R.


Journal of applied physics 108 (2010), No.1, Art. 013705, 7 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Kontaktierung und Strukturierung; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

In this paper an analytical model of the effective recombination (S-eff) on the back surface of locally contacted solar cell is developed. We justify this approach by first showing that the three-dimensional (3D) problem can be reduced to a one-dimensional (1D) problem by calculating S-eff. The values of S-eff calculated with our model and two existing models are compared to finite element simulations. A large range of cases from high to low scale structures, including variation in the surface recombination velocity at the passivated area are investigated. The model presented in this paper is in good agreement with finite element simulations. Existing models from literature are also compared to finite element simulations, showing some of their limitations. In addition, we propose a method, not restricted to dark conditions, that simulates the 3D locally contacted structures by means of two 1D simulations.