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Ion beam milling of InP with an Ar/O2-gas mixture

: Katzchner, W.; Steckenborn, A.; Löffler, R.; Grote, N.


Applied Physics Letters 44 (1984), No.3, pp.352-354
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Journal Article
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; semiconductor technology; sputter etching; semiconductor; ion beam etching; ion beam milling; inp; ar/o2-gas mixture; undercutting; novolak-type photoresists

Ion beam etching has been successfully applied to InP using an Ar/O2-gas mixture. Varying angles of beam incidence resulted in different shapes of the etched profiles with the achievement even of undercutting. Good selectivity with respect to Novolak-type photoresists prevails at higher accelerating voltages.