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ArF laser induced lift-off process

: Moerl, L.

Microelectronic engineering 5 (1986), No.1-4, pp.453-458
ISSN: 0167-9317
International Conference on Microlithography, Microcircuit Engineering <1986, Interlaken>
Conference Paper, Journal Article
Fraunhofer HHI ()
argon compounds; excimer lasers; integrated circuit technology; laser beam applications; surface treatment; VLSI; process parameters; submicron lithography; arf laser induced lift-off process; excimer laser pulse; arf excimer laser; Si; SiO; InP; SiO2

A method is described which employs an excimer laser pulse to structure metal and SiO2 layers on Si, SiO, InP and LiNbO3 surfaces. The parameters determining the quality of this process are discussed.