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Monolithic IO-technology-modulators and switches based on InP

: Schlachetzki, A.

Kersten, R.T. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Integrated Optical Circuit Engineering III
Bellingham/Wash.: SPIE, 1986 (Proceedings of SPIE 651)
ISBN: 0-89252-686-6
Integrated Optical Circuit Engineering <3, 1986, Innsbruck>
Conference Paper
Fraunhofer HHI ()
iii-v semiconductors; indium compounds; integrated optics; optical modulation; waveguiding devices; semiconductors; monolithic integrated optics technology; electro-optical effect; modulators; switches; optical absorption; elasto-optic effects; free carriers; absorption; refractive index; InGaAsP-InP; inp

Waveguide devices, like modulators and switches, realized with InGaAsP lattice matched to InP are discussed. Basic phenomena, such as optical absorption, electro- and elasto-optic effects as well as the impact of free carriers on absorption and refractive index, are considered and described in their use with actually realized devices. Whereas the optical absorption seems not to be a main obstacle, the relatively large length of the devices will restrict their employment to the most essential functions.