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Endpoint detection for CH4/H2 reactive ion etching of InGaAsP heterostructures by mass spectrometry

: Schmid, H.; Fidorra, F.; Grutzmacher, D.

Harris, J.S.:
Gallium arsenide and related compounds 1988 : Proceedings of the Fifteenth International Symposium on Gallium Arsenide and Related Compounds held in Atlanta, Georgia, 11 - 14 September 1988
Bristol: Institute of Physics, 1989 (Institute of Physics - Conference Series 96)
ISBN: 0-85498-051-2
International Symposium on Gallium Arsenide and Related Compounds <15, 1988, Atlanta>
Conference Paper
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; mass spectra; p-n heterojunctions; sputter etching; semiconductor; methane-hydrogen mixture; reactive ion etching; heterostructures; mass spectrometry; endpoint detection; etching; reactive plasma; etching products; depth resolution; InGaAsP; ph4+; h2; InGaAsP-InP; InP

Mass spectrometry has been shown to be a suitable tool for endpoint detection during etching of InGaAsP heterostructures in a reactive plasma of CH4/H2. Among the volatile etching products PH4+ can be detected with the highest sensitivity and discrimination. A depth resolution of 5 nm could be obtained.