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Hydrogen passivation of Zn acceptors in InGaAs during reactive ion etching

: Moehrie, M.


Applied Physics Letters 56 (1990), No.6, pp.542-4
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer HHI ()
etching; gallium arsenide; iii-v semiconductors; indium compounds; passivation; zinc; semiconductors; reactive ion etching; electrically active acceptors; thin layer; nonlinear current/voltage characteristics; nonalloyed Zi/Pt/Au contacts; As-treated P++-InGaAs layers; hydrogen-free etching gases; InGaAs:Zn

It is shown that the use of hydrogen-containing gases such as CHF3/H2, CHF3, CH4/H2, and CH4/He in reactive ion etching processes leads to a drastic reduction of the concentration of electrically active acceptors in a thin layer at the surface of highly Zn-doped InGaAs. This passivation effect leads to strongly nonlinear current/voltage characteristics of nonalloyed Ti/Pt/Au contacts when applied directly on as-treated p++-InGaAs layers. The observed deactivation of acceptors is inferred to be caused by hydrogen since no such effect was found with the use of hydrogen-free etching gases.