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High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors


ESSDERC '90. 20th European Solid State Device Research Conference. Proceedings
Bristol: Hilger, 1990
ISBN: 0-7503-0065-5
European Solid State Device Research Conference <20, 1990, Nottingham>
Conference Paper
Fraunhofer HHI ()
bipolar integrated circuits; driver circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; mmic; solid-state microwave devices; forward mode; monolithic integration; transit frequency; double-heterostructure bipolar transistors; active transistor areas; inverse mode; collector currents; laser driver circuit; 6 GHz; 100 ma; 2.6 Gbit/s; GaInAsP-InP

The authors report on invertible DHBTs fabricated on GaInAsP/InP. Localized Zn diffusion allowed for practically equal active transistor areas in the forward and inverse mode. Transit frequencies up to 6 GHz with collector currents over 100 mA could be demonstrated on these devices. As an application, three transistors were monolithically integrated to form a laser driver circuit showing modulation rates up to 2.6 Gbit/s.