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Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared

: Muller, R.


Institute of Electrical and Electronics Engineers -IEEE-:
Second International Conference Indium Phosphide and Related Materials
New York, NY: IEEE, 1990
International Conference Indium Phosphide and Related Materials <2, 1990, Denver/Colo.>
Conference Paper
Fraunhofer HHI ()
ellipsometry; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; process control; spatial variables measurement; sputter etching; temperature measurement; reactive ion etching process control; semiconductors; near infrared; in-situ ellipsometry; etch depth measurement; depth monitoring; endpoint detection; in-situ measurement; wafer temperature; plasma exposure; 1300 nm; InGaAsP-InP heterostructure

The use of in-situ ellipsometry at a wavelength of 1300 nm for etch depth measurement and endpoint detection during reactive ion etching (RIE) of InGaAs(P)/InP heterostructures is reported. The basic principle and the experimental technique are briefly described. It is shown that etch depth monitoring and endpoint detection can be performed as low as 0.1. Furthermore, the method has been used for in-situ measurement of the wafer temperature during plasma exposure.