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Integrated wavelength demultiplexer-receiver on InP



Applied Physics Letters 60 (1992), No.8, pp.971-3
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer HHI ()
field effect integrated circuits; gallium arsenide; iii-v semiconductors; indium compounds; infrared detectors; integrated optoelectronics; multiplexing equipment; optical communication equipment; photodiodes; receivers; integrated wavelength demultiplexer receiver; monolithic integration; iii-v semiconductor; detector stage; photodiode; field-effect transistor; load resistor; bidirectional transmission link; bit error rate; sensitivity; intrinsic sensitivity; 1.3 micron; 1.55 micron; 576 mbit/s; inp; GaInAsP-InP

A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 mu m/1.55 mu m bidirectional transmission link. At 576 Mbit/s and 10-9 bit error rate the sensitivity of the module was -21 dBm, while the intrinsic sensitivity of the receiver was determined to be -21 dBm.