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Pseudomorphic GaxIn1-xAs on InP for HEMT structures grown by MBE

: Kunzel, H.; Bach, H.G.; Bottcher, J.; Dickmann, J.; Dambkes, H.; Nachtwei, G.; Heide, S.


Microelectronic engineering 19 (1992), No.1-4, pp.329-334
ISSN: 0167-9317
European Solid State Device Research Conference <22, 1992, Leuven>
Conference Paper, Journal Article
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; high electron mobility transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; pseudomorphic HEMT; mbe growth; high frequency performance; HEMT structures; in-content; channel layer; gate length; 0.25 micron; inp; AlInAs-GaInAs

Material characteristics of strained MBE GaInAs layers on InP have been investigated in relation to the In-content. Pseudomorphic AlInAs/GaInAs HEMT structures are grown and characterized by systematically increasing the In-content of the channel layer. Preliminary results on 0.25 mu m gate length devices are presented.